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Enhanced Light Extraction of GaN-Based Green Light-Emitting Diodes With GaOOH Rods

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3 Author(s)
Hee Kwan Lee ; Dept. of Electron. & Radio Eng., Kyung Hee Univ., Yongin, South Korea ; Myung Sub Kim ; Jae Su Yu

We reported the enhanced light extraction efficiency in InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) with gallium oxide hydroxide (GaOOH) rods. The GaOOH rods were prepared by an aqueous gallium nitrate solution at 80°C and then coated on the surface of indium tin oxide electrodes of LEDs by a simple drop coating process. The synthesized GaOOH rods indicated a rhombus-shaped rod structure with average lengths of 2 μm and lateral dimensions of 50-500 nm. For LEDs with GaOOH rods, the light output powers were increased by 24.3% and 26.4% compared to the conventional LED on patterned sapphire substrate at 20 mA and 100 mA, respectively. Also, there was no distinct degradation in electrical characteristics of LEDs with GaOOH rods.

Published in:

Photonics Technology Letters, IEEE  (Volume:24 ,  Issue: 4 )