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III-V MOSFETs are currently being considered as a candidate for future high performance transistors . In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties . III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-κ gate oxides.
Device Research Conference (DRC), 2011 69th Annual
Date of Conference: 20-22 June 2011