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Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers

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5 Author(s)
Egard, M. ; Solid State Phys., Lund Univ., Lund, Sweden ; Ohlsson, L. ; Borg, B.M. ; Wernersson, L.-E.
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III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-κ gate oxides.

Published in:

Device Research Conference (DRC), 2011 69th Annual

Date of Conference:

20-22 June 2011