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Very high current gain InGaAs/InP heterojunction bipolar transistors grown by metalorganic chemical vapour deposition

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5 Author(s)

A maximum DC current gain ( beta ) of 2.4*104 and small-signal current gain (hfe) of 4.9*104 were obtained for InGaAs/InP heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapour deposition (MOCVD). The excellent HBT gain performance is attributed to the exceptional material quality, the good control over p-type dopant diffusion at the base-emitter heterojunction and the existence of a doping-induced drift field in the base.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 1 )

Date of Publication:

3 Jan. 1991

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