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Programmable memory cell using quantum confined Stark effect in multi-quantum well heterojunction bipolar transistor

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4 Author(s)
W. -Q. Li ; Michigan Univ., Ann Arbor, MI, USA ; S. Goswami ; P. Bhattacharya ; J. Singh

A three terminal bistable programmable memory cell which can be read either optically or electrically is proposed and demonstrated. The device is based on using Stark effect of the excitonic transitions in a multi-quantum well base region of a heterojunction bipolar transistor. The single device can be flipped (and held) from low transmittance (high voltage) to high transmittance (low voltage) state and vice versa by a varying base current signal.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 1 )