In Flight SEU/MCU Sensitivity of Commercial Nanometric SRAMs: Operational Estimations

A method and the corresponding platform devoted to operational SEE-rate prediction are presented and illustrated by experimental results. Predicted error-rates are in well agreement with results issued from the activation of an SRAM platform, in 90 nm technology node, on board stratospheric balloons flights. Direct ionization of protons is investigated for a 65 SRAM memory virtually boarded on the balloon flight.