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Oxide-based thin-film transistors (TFTs) with a lateral in-plane electrode are self-assembled on paper substrates, and the electrical modulation effect of the in-plane electrode is investigated. A SiO2-based solid-electrolyte film with high specific capacitance is used as the gate dielectric, and the operation voltage is reduced to less than 2.0 V. The threshold voltage (Vth) of such paper TFTs is tuned from -0.98 to 0.94 V by different voltage biases on the in-plane electrode. The threshold voltage shift (ΔVth) can be described by ΔVth = -(CG2/CG1)VG2, where CG2 and CG1 are the in-plane electrode and bottom-gate specific capacitance values. High electrical performance with a current on/off ratio of 6 ×105 ~ 106, a subthreshold swing of 0.14 ~ 0.19 V/dec, and a mobility of 8.64 ~ 9.45 cm2/V·s is obtained at different in-plane electrode voltage biases. Such low-voltage paper TFTs are promising for low-cost and portable electronics.