Cart (Loading....) | Create Account
Close category search window

Interdigitated Back-Contacted Silicon Heterojunction Solar Cells With Improved Fill Factor and Efficiency

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Haschke, J. ; Inst. for Silicon Photovoltaics, Helmholtz-Zentrum Berlin, Berlin, Germany ; Mingirulli, N. ; Gogolin, R. ; Ferré, R.
more authors

We compare recently reported results of efficient back-contacted amorphous/crystalline silicon heterojunction solar cells with fill factors up to 78.8% with calculated j-V characteristics that are derived from an area-weighted summation of recombination currents taken from lifetime measurements. We compare solar cell structures with and without an intrinsic buffer layer beneath the p-type amorphous silicon emitter. We find that the inclusion of the buffer layer reduces the fill-factor potential by changing the ideality of the recombination current. However, analyzing the series resistance by illumination-dependent j-V-measurements, we find that the major loss mechanism of the fill factor is the limitation of the charge-carrier transport.

Published in:

Photovoltaics, IEEE Journal of  (Volume:1 ,  Issue: 2 )

Date of Publication:

Oct. 2011

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.