By Topic

Characteristics of n-Type Junctionless Poly-Si Thin-Film Transistors With an Ultrathin Channel

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Horng-Chih Lin ; Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Cheng-I Lin ; Tiao-Yuan Huang

In this letter, we study the characteristics of n-type junctionless (JL) poly-Si thin-film transistors (TFTs) with an ultrathin and heavily phosphorous doped channel. The fabricated devices show excellent performance with a subthreshold swing of 240 mV/dec and an on/off current ratio of >; 107. Moreover, the JL device shows 23 times increase in the on-state current at a gate overdrive of 4 V as compared with the conventional control device with an undoped channel. The significant improvement in the current drive is ascribed to the inherently high carrier concentration contained in the channel of the JL device. These results evidence the great potential of the JL poly-Si TFTs for the manufacturing of future 3-D and flat-panel electronic products.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 1 )