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Mesa release and deposition used for GaAs-on-Si MESFET fabrication

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4 Author(s)
De Boeck, J. ; Interuniv. Micro-Electron. Center, Leuven, Belgium ; Zou, G. ; Van Rossum, M. ; Borghs, G.

A report is made on the first devices processed using a novel mesa release and deposition (MRD) technique on hetero-epitaxial GaAs-on-Si. Mesas are etched, released by under-etching and deposited, selfaligned, on their original positions. Standard MESFET processing is performed on the MRD structures demonstrating the suitability of the technique for fabrication of monolithic optoelectronic GaAs devices on Si.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 1 )

Date of Publication:

3 Jan. 1991

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