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Suppression of leakage current in InGaAsP/InP buried heterostructure lasers by InAlAs strained current-blocking layers

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2 Author(s)
Ohtoshi, T. ; Central Res. Lab., Tokyo, Japan ; Chinone, N.

InGaAsP/InP buried heterostructure (BH) lasers with InAlAs strained current-blocking layers are proposed. For use as a current-blocking material with a bandgap energy larger than that of InP, InAlAs is superior to InGaP. This is because a wide bandgap can be obtained in the InAlAs without large bandgap shrinkage caused by tensile strain. A two-dimensional simulation shows that the leakage current in BH lasers with thin pnpn blocking layers is suppressed up to 85 degrees C by employing 100 AA In1-xAlxAs(x>or=0.54) layers.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 1 )