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Analog circuit design using amorphous silicon thin film transistors

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2 Author(s)
Madeira, P. ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; Hornsey, R.

Amorphous silicon thin film transistors (TFTs) can be important circuit elements in large area imaging sensors because of their advantageous material and optical properties. These TFTs bring with them a gate-bias-induced threshold voltage (VT) shift, which is a highly undesirable effect for analog circuits. This paper addresses two techniques for reducing the effect of VT shift in TFT circuit applications. Internal compensation for VT shift was achieved to a first order by optimal bias conditions designed in the circuit. In a second circuit negative feedback was used to make amplifier circuits less sensitive to changes in VT. Results are presented for both measured circuits and for simulations using the ASIA-1 amorphous silicon TFT model on the AIM Spice simulator. Experiments demonstrate that a differential amplifier with ~20 dB of gain, varies less than 2% change when the VT of the TFTs change by up to 300%. Alternatively, a three-stage amplifier, with an overall gain of 13 dB, displays only a 5% change of overall gain when employing negative feedback

Published in:

Electrical and Computer Engineering, 1997. Engineering Innovation: Voyage of Discovery. IEEE 1997 Canadian Conference on  (Volume:2 )

Date of Conference:

25-28 May 1997