By Topic

Electro-optical measurement of high-field conductivity in delta -doped GaAs epitaxial layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Balynas, Y. ; Semiconductor Phys Inst., Acad. of Sci., Vilnius, USSR ; Stalnionis, A. ; Krotkus, A. ; Troideris, G.
more authors

An electro-optical sampling technique for high-field conductivity measurement was proposed and electron drift velocity in delta -doped GaAs samples was measured. The authors measured the velocity-field characteristics of 2-DEG in delta -doped structures with DC pulses as short as 30 ps. A Nd3+:YAlO3 laser system was used in the experiments. For stabilising the laser pulse energy the system was equipped with a special Q-switch and a fast electronic feedback loop inside the laser cavity.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 1 )