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Design of SCR devices for SiGe BiCMOS applications

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3 Author(s)
Parthasarathy, S. ; Analog Devices, Wilmington, MA, USA ; Salcedo, J.A. ; Hajjar, J.-J.

An optimum vertical SiGe SCR design is presented for on-chip electrostatic discharge (ESD) protection. The device response to fast transients, emulating ESD CDM-type events, is compared with standard clamp structures having similar footprint-area, loading-capacitance and current handling ability. SCR designs include variation in the device's anode construction, anode geometry and triggering mechanism.

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE

Date of Conference:

9-11 Oct. 2011

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