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Zero-Sleep-Leakage Flip-Flop Circuit With Conditional-Storing Memristor Retention Latch

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5 Author(s)
Chul-Moon Jung ; Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea ; Kwan-Hee Jo ; Eun-Sub Lee ; Huan Minh Vo
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In this paper, two new zero-sleep-leakage flip-flop (F-F) circuits are proposed to make the sleep leakage literally zero. At the sleep-in time, the F-F's data are transferred to memristor retention latch; thus, the F-F can be completely cutoff from the external power supply saving the energy leak during the sleep time. The conditional storing circuit in the F-F (type-2) can reduce switching power by 87% in storing the data than the F-F (type-1). And, the crossover time of the F-F (type-2) is shortened by 97% than the F-F (type-1).

Published in:

Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 2 )

Date of Publication:

March 2012

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