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Floating Body Effect in Partially Depleted Silicon Nanowire Transistors and Potential Capacitor-Less One-Transistor DRAM Applications

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3 Author(s)
Myeongwon Lee ; Dept. of Electr. Eng., Korea Univ., Seoul, South Korea ; Taeho Moon ; Sangsig Kim

We present a capacitor-less 1T-DRAM cell on SiO2 /Si substrates using a silicon nanowire (SiNW) as the channel material. The SiNWs are fabricated by a top-down route that is fully compatible with the current Si-based CMOS technology. Based on the observation of the floating body effect of a partially depleted (PD) silicon nanowire transistor (SNWT), its 1T-DRAM functionality and reliability characteristics are investigated. By virtue of the top-down route providing a printable form of the inverted triangular SiNWs, the PD SNWT 1T-DRAM cell can be applied on insulating plastic substrates for potential applications of flexible electronics.

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Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 2 )