Referenced Items are not available for this document.
A single-pixel plasmonic complementary metal oxide semiconductor (CMOS) photo sensor consisting of a plasmonic color filter integrated on a CMOS photodiode was fabricated using electron beam lithography and dry etch. The photocurrent measurement results confirmed the three primary color filtering responses that could be achieved in a single layer of nanostructured aluminium film. Finite-difference time-domain simulation demonstrated a good agreement of the reflection spectra with the measured result. This research can lead to the development of advanced CMOS image sensors with low cost and low crosstalk.
Published in:
Photonics Technology Letters, IEEE
(Volume:24
,
Issue:
3
)
Date of Publication: Feb.1, 2012
- Page(s):
- 197 - 199
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 12472038
- Digital Object Identifier :
- 10.1109/LPT.2011.2176333
- Product Type:
- Journals & Magazines
- Date of Publication :
- 16 November 2011
- Date of Current Version :
- 16 January 2012
- Issue Date :
- Feb.1, 2012
- Sponsored by :
- IEEE Photonics Society
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