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Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

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10 Author(s)
Tadjer, M.J. ; Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA ; Anderson, T.J. ; Hobart, K.D. ; Feygelson, T.I.
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Nanocrystalline diamond (NCD) thin films are deposited as a heat-spreading capping layer on AlGaN/GaN HEMT devices. Compared to a control sample, the NCD-capped HEMTs exhibited approximately 20% lower device temperature from 0.5 to 9 W/mm dc power device operation. Temperature measurements were performed by Raman thermography and verified by solving the 2-D heat equation within the device structure. NCD-capped HEMTs exhibited 1) improved carrier density NS, sheet resistance RSH; 2) stable Hall mobility μH and threshold voltage VT; and 3) degraded on-state resistance RON , contact resistance RC, transconductance Gm, and breakdown voltage VBR.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 1 )

Date of Publication:

Jan. 2012

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