Referenced Items are not available for this document.
Nanocrystalline diamond (NCD) thin films are deposited as a heat-spreading capping layer on AlGaN/GaN HEMT devices. Compared to a control sample, the NCD-capped HEMTs exhibited approximately 20% lower device temperature from 0.5 to 9 W/mm dc power device operation. Temperature measurements were performed by Raman thermography and verified by solving the 2-D heat equation within the device structure. NCD-capped HEMTs exhibited 1) improved carrier density NS, sheet resistance RSH; 2) stable Hall mobility μH and threshold voltage VT; and 3) degraded on-state resistance RON , contact resistance RC, transconductance Gm, and breakdown voltage VBR.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
1
)
Date of Publication: Jan. 2012
- Page(s):
- 23 - 25
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12425716
- Digital Object Identifier :
- 10.1109/LED.2011.2171031
- Product Type:
- Journals & Magazines
- Date of Publication :
- 16 November 2011
- Date of Current Version :
- 22 December 2011
- Issue Date :
- Jan. 2012
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
