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n-Type Metal-Base Organic Transistor

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5 Author(s)
Abd. Rashid bin Mohd. Yusoff ; Departamento de Física, Group of Organic Optoelectronic Devices, Universidade Federal do Paraná, Curitiba, Brazil ; Ying Song ; Dietmar Schulz ; Eikner Holz
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This investigation proposes an Ir(ppy)3/Ir(mpp)3 double-emitter heterojuction metal-base transistors grown by vacuum sublimation deposition. The improved structure exhibits the advantages of high ON-to-OFF current ratio 4.98 × 106 and high current gains (β) 355.6. The device survived for almost two months with a slight dropped in these parameters before it is completely gone in four months. Furthermore, this study elucidates the relation between leakage current, current gains, and ON-to-OFF current ratio.

Published in:

IEEE Transactions on Nanotechnology  (Volume:11 ,  Issue: 2 )