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BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application

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8 Author(s)
Galeti, M. ; LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil ; Rodrigues, M. ; Martino, J.A. ; Collaert, N.
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This paper presents an analysis of the bipolar effect in triple gate n-and p-SOI devices with high-k/TiN metal gate. High-k dielectrics and thicker TiN achieve a larger trigger voltage. However, a reduced program window is found for MuGFETs with high-k dielectrics. p-FET devices give rise to a smaller sense margin and program window due to the reduced hole mobility. Narrow fin devices exhibit a larger trigger voltage and reduced program window and sense margin for a given Vds.

Published in:

SOI Conference (SOI), 2011 IEEE International

Date of Conference:

3-6 Oct. 2011

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