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This paper presents an analysis of the bipolar effect in triple gate n-and p-SOI devices with high-k/TiN metal gate. High-k dielectrics and thicker TiN achieve a larger trigger voltage. However, a reduced program window is found for MuGFETs with high-k dielectrics. p-FET devices give rise to a smaller sense margin and program window due to the reduced hole mobility. Narrow fin devices exhibit a larger trigger voltage and reduced program window and sense margin for a given Vds.
SOI Conference (SOI), 2011 IEEE International
Date of Conference: 3-6 Oct. 2011