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To fulfill high-speed and low-power specifications for both logic and analog applications, III-V FETs with high-κ gate dielectric stack are especially appealing, in particular for their ability to operate under low power supply voltage. Using complementary tools such as a 2D Poisson-Schrödinger solver and a Monte Carlo device simulator, we assess the potentiality of several III-V MOSFET structures in terms of gate charge control, static/dynamic performance and noise.
SOI Conference (SOI), 2011 IEEE International
Date of Conference: 3-6 Oct. 2011