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Procedure for inverse modelling of GaAs/AlGaAs HEMT structures from DC I/V characteristic curves

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2 Author(s)
Mahon, S.J. ; Macquarie Univ., NSW, Australia ; Skellern, D.J.

A procedure for the inverse modelling of GaAs/AlGaAs HEMT structures from DC I/V characteristic curves is reported. This procedure allows important structural parameters, including the aluminium fraction, dopant density, dopant layer thickness, physical gate length and source resistance to be accurately obtained.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 1 )

Date of Publication:

3 Jan. 1991

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