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This paper presents an exploratory application of BSIM-IMG (May/2011-release) to ET/UTBB SOI MOSFET modeling and circuit simulations. Compliance with fundamental compact model requirements and physical scalability with respect to technology parameters in BSIM-IMG are analyzed. BSIM-IMG model parameters are extracted on a 20nm technology. Simulation results are presented both for conventional benchmark and ET/UTBB SOI specific circuits.
SOI Conference (SOI), 2011 IEEE International
Date of Conference: 3-6 Oct. 2011