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The copper interconnects cannot keep pace with the IC interconnect requirements as the feature size continues to scale down to nanoscale. Theoretical works predicted that carbon nanotube (CNT) is more superior than copper for future VLSI interconnects in terms of electrical conductivity, thermal management and reliability. Technology breakthroughs are required to bridge the gaps between the theoretical predictions and what is achievable with current CNT technology. In this paper, we shall describe our experimental efforts on the controlled growth of aligned CNTs; the integrations of CNT interconnects with IC technology; and the electrical characterization of the CNT interconnect. We also present the electro-migration test result of CNT-based interconnects to demonstrate the potential of CNT as robust VLSI interconnects. We hope our works provide useful data on the potential of CNT for VLSI interconnect applications.