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This paper presents a novel memory cell consisting of a memristor and ambipolar transistors. Macroscopic models are utilized to characterize the operations of this memory cell. A detailed treatment of the two basic memory operations (write and read) with respect to memristor features is provided; particular, emphasis is devoted to the threshold characterization of the memristance and the on/off states. Extensive simulation results are provided to assess performance in terms of the write/read times, transistor scaling and power dissipation. The simulation results show that the proposed memory cell achieves superior performance compared with other memristor-based cells found in the technical literature.
Date of Conference: 9-12 Oct. 2011