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Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes

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6 Author(s)
V. Goiffon ; Université de Toulouse, ISAE, Toulouse, France ; P. Cervantes ; C. Virmontois ; F. Corbiere
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Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co γ-rays up to 2.2 Mrad (SiO2) and studied in order to identify the most efficient structures and the guidelines (recess distance, bias voltage) to follow to make them work efficiently in such technology. To do so, both photodiode arrays and active pixel sensors are used. After 2.2 Mrad (SiO2), the studied sensors are fully functional and most of the radiation hardened photodiodes exhibit radiation induced dark current values more than one order of magnitude lower than the standard photodiode.

Published in:

IEEE Transactions on Nuclear Science  (Volume:58 ,  Issue: 6 )