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A Novel Wide-Temperature-Range, 3.9 ppm/ ^{\circ} C CMOS Bandgap Reference Circuit

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3 Author(s)
Andreou, C.M. ; Dept. of Electr. & Comput. Eng., Univ. of Cyprus, Nicosia, Cyprus ; Koudounas, S. ; Georgiou, J.

This paper presents an innovative CMOS Bandgap Reference Generator topology that leads to an improved curvature compensation method over a very wide temperature range. The proposed design was implemented in a standard 0.35 μm CMOS process. The compensation is performed by using only poly-silicon resistors. This is achieved by using a second Op-amp that generates a CTAT current, which is subsequently used to enhance the curvature compensation method. The performance of the circuit was verified experimentally. Measured results have shown temperature coefficients as low as 3.9 ppm/°C over a temperature range of 165°C ( -15°C to 150°C ) and temperature coefficients as low as 13.7 ppm/°C over an extended temperature range of 200°C (-50°C to 150°C ). In addition the circuit demonstrated very good line regulation performance for a broad range of supply voltages. The measured line regulation at room temperature is 0.039% V.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:47 ,  Issue: 2 )

Date of Publication:

Feb. 2012

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