By Topic

Estimates of EEPROM device lifetime

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Li, Leilei ; School of Microelectronics, Xidian University, Xi'an, 710071, China; 58th Research Institute, China Electronics Technology Group Corporation, Wuxi 214035, China ; Yu, Zongguang ; Hao, Yue

A method was developed to estimate EEPROM device life based on the consistency for breakdown charge, QBD, for constant voltage time dependent dielectric breakdown (TDDB) and constant current TDDB stress tests. Although an EEPROM works with a constant voltage, QBD for the tunnel oxide can be extracted using a constant current TDDB. Once the charge through the tunnel oxide, ΔQFG, is measured, the lower limit of the EEPROM life can be related to QBD/ΔQFG. The method is reached by erase/write cycle tests on an EEPROM.

Published in:

Tsinghua Science and Technology  (Volume:16 ,  Issue: 2 )