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Whole-Chip ESD protection design for RF and AMS ICs

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7 Author(s)
Xin Wang ; Department of Electrical Engineering, University of California, Riverside, CA 92521, USA ; Siqiang Fan ; Hui Zhao ; Lin Lin
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As integrated circuits (IC) technologies advance into very-deep-sub-micron (VDSM), electrostatic discharge (ESD) failure becomes one of the most devastating IC reliability problems and on-chip ESD protection design emerges as a major challenge to radio frequency (RF), analog, and mixed-signal (AMS) IC designs. This paper reviews key design aspects and recent advances in whole-chip ESD protection designs for RF/AMS IC applications in CMOS technologies.

Published in:

Tsinghua Science and Technology  (Volume:15 ,  Issue: 3 )