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ESD-induced noise to low noise amplifier circuits in BiCMOS

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6 Author(s)
Chen, Guang ; On Semiconductor, 5005 East McDowell Road, Phoenix, AZ 85008, USA ; Wang, Xin ; Fan, Siqiang ; Tang, He
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Electrostatic discharge (ESD) induced parasitic effects have serious impacts on performance of radio frequency (RF) integrated circuits (IC). This paper discusses a comprehensive noise analysis procedure for ESD protection structures and their negative influences on RF ICs. Noise figures (NFs) of commonly used ESD protection structures and their impacts on a single-chip 5.5 GHz low-noise amplifier (LNA) circuit were depicted. A design example in 0.18 μm SiGe BiCMOS was presented. Measurement results confirm that significant noise degradation occurs in the LNA circuit due to ESD-induced noise effects. A practical design procedure for ESD-protected RF ICs is provided for real-world RF IC optimization.

Published in:

Tsinghua Science and Technology  (Volume:15 ,  Issue: 3 )