By Topic

One-Dimensional Physical Model to Predict the Internal Quantum Efficiency of Si-Based LEDs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Puliyankot, V. ; Semicond. Components Group, Univ. of Twente, Enschede, Netherlands ; Hueting, R.J.E.

A simple analytical model for p-i-n light-emitting diodes is presented to give insight into the device physics. The 1-D model describes the dc electrical characteristics and internal quantum efficiency (ηIQE) as a function of the applied bias and is in good agreement with TCAD simulations. An optimization scheme, based on the same model, shows improved ηIQE for engineered heterojunctions by reducing the diffusion current contribution. The results show that the use of heterojunctions increases the light intensity inside a narrow-bandgap material, akin to the experimentally observed results. The bandgap of the active region determines the voltage at which the maximum efficiency occurs. It is also shown that maximum ηIQE occurs at a lower bias than that typically used for studying the maximum light intensity. The effect of injection dependence of recombination coefficients on the efficiency is also studied. For the first time, the electrical performance of a multilayer active region is modeled.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 1 )