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Performance and reliability of multilayer silicon nanocrystal nonvolatile memory

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5 Author(s)
Wang, Liudi ; Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, China ; Zhang, Zhigang ; Zhao, Yue ; Mao, Ping
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Nonvolatile memories (NVMs) with triple layers of silicon nanocrystals were fabricated with conventional CMOS technology. This paper explores the program/erase performance and reliability of NVMs with three layers of nanocrystals. The results indicate that the nanocrystals in the triple-layer nanocrystal NVM (NCNVM) are difficult to fully charge during the programming process. The programming speed of the triple-layer NCNVMs is quicker than that of single-layer NCNVMs, which means that the second and third layers of nanocrystals in the triple-layer NCNVM affect the charge of the first layer nanocrystals. Reliability tests show that the memory window has little degradation after 1 × 104 cycles.

Published in:

Tsinghua Science and Technology  (Volume:14 ,  Issue: 1 )