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Impact of Well Structure on Single-Event Well Potential Modulation in Bulk CMOS

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8 Author(s)
Gaspard, N.J. ; Vanderbilt Univ., Nashville, TN, USA ; Witulski, A.F. ; Atkinson, N.M. ; Ahlbin, J.R.
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Perturbations in N-well potential have been shown to strongly affect the charge collection, charge sharing, and parasitic bipolar transistor characteristics. In this paper, temporal and spatial characteristics of the well-potential modulation are characterized through 3-D TCAD simulations. Effects of well-contact layout, ion energy, and technology process parameters for a 90-nm bulk CMOS process are investigated.

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Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 6 )