By Topic

A 1.6-V 25- \mu A 5-ppm/ ^{\circ} C Curvature-Compensated Bandgap Reference

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Ze-kun Zhou ; State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China ; Yue Shi ; Zhi Huang ; Pei-Sheng Zhu
more authors

A high precision high-order curvature-compensated bandgap reference (BGR) compatible with standard BiCMOS process is presented in this paper that is capable of working down to input voltages of 1.6 V with 1.285 V output voltage. High-order curvature correction for this reference is accomplished by a novel piecewise technique, which realizes exponential curvature compensation in temperature range, and a logarithmic compensation term proportional to VT In T in higher temperature range through simple structures. Experimental results of the proposed BGR implemented in 0.5-μm BiCMOS process demonstrate that a temperature coefficient (TC) of 5 ppm/°C is realized at 3.6 V power supply, a power-supply noise attenuation (PSNA) of 70 dB is achieved without filtering capacitors, and the line regulation is better than 0.47 mV/V from 1.6 V to 5 V supply voltage while dissipating a maximum supply current of 25 μA. The active area of the presented BGR is 180 μm × 220 μm.

Published in:

Circuits and Systems I: Regular Papers, IEEE Transactions on  (Volume:59 ,  Issue: 4 )