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High-performance amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are successfully fabricated on a colorless polyimide substrate using a top-gate self-aligned structure. All thin films are deposited by roll-to-roll-compatible sputtering processes at room temperature. The maximum field-effect mobility is 18 cm2/V·s, the threshold voltage is -1.35 V, the subthreshold slope is 0.1 V/decade, and the on/off current ratio is about 105. The results highlight that excellent device performance can be realized in a-IGZO TFTs without compromising manufacturability.