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Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm g_{m} , and 0.66- \Omega \cdot \hbox {mm} R_{\rm on}

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4 Author(s)
Singisetti, U. ; Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA ; Hoi Wong, Man ; Speck, James S. ; Mishra, Umesh K.

We report enhanced dc and small-signal RF performance of enhancement-mode (E-mode) metal-oxide-semiconductor heterojunction field-effect transistors (MOS-HFETs) in N-polar GaN technology with an ultrathin 5-nm GaN channel and graded AlGaN back-barrier structure with a record on-resistance (Ron) of 0.66 Ω·mm. The device has a maximum drain current (Id) of 1.15 A/mm, a peak transconductance (gm) of 510 mS/mm, and a peak current-gain cutoff frequency (ft) of 122 GHz, with a positive threshold voltage (Vth) of 1.6 V. The device shows improved saturation and pinchoff characteristics compared to the previously reported N-polar E-mode HFETs with a maximum Ion/Ioff ratio of 2.2 × 105.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 1 )