By Topic

Integrated High-Frequency Power Converters Based on GaAs pHEMT: Technology Characterization and Design Examples

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Vipindas Pala ; Center for Industrial Electronics , Rensselaer Polytechnic Institute, Troy, USA ; Han Peng ; Peter Wright ; Mona Mostafa Hella
more authors

The potential of GaAs pHEMT technology for high-frequency power-switching applications is discussed within the context of integrated power supplies for portable wireless systems. Various technology considerations are presented, including the optimization of the power-switching transistor and passives integration. Two design examples for integrated dc-dc converters are implemented in a 0.5-μm GaAs E/D pHEMT process. The first uses coupled inductors to reduce the current ripple and enhance the dynamic performance of the converter. The two-phase, 0.5 A/phase converter occupies 2 mm × 2.1 mm without the output network. An 8.7-nH filter coupled inductor is implemented in 65-μm-thick top copper metal layer, and flip-chip bonded to the dc-dc converter board. The presented converter converts 4.5-V input to 3.3-V output at 150-MHz switching frequency with a measured power efficiency of 84%, which is one of the highest efficiencies reported to date for similar current/voltage ratings. The second example is a hysteric controlled, 100-MHz switching frequency single-phase GaAs pHEMT buck converter designed to drive power amplifier loads. The design can deliver up to 37-dB·m output power and has a peak efficiency of 88% and a 3-dB bandwidth of 14.5 MHz.

Published in:

IEEE Transactions on Power Electronics  (Volume:27 ,  Issue: 5 )