Comparison of SOS MOSFET's Equivalent Circuit Parameters Extracted From $LCR$ Meter and VNA Measurement

In this paper, we critically compare two techniques for the parametrization of silicon-on-sapphire MOSFETs' high-frequency small-signal equivalent circuit and discuss the scalability of high-frequency equivalent circuit parameters. We demonstrate that the same values of the high-frequency circuit elements are obtained from both the vector network analyzer and the low-frequency LCR measurements. We show that this holds even when majority carriers in the isolated body of the transistor are not in the equilibrium state, implying that the equivalence does not depend on quasi-static response of the carriers.