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Resistive Switching in \hbox {HfO}_{2} Probed by a Metal–Insulator–Semiconductor Bipolar Transistor

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7 Author(s)
Yalon, E. ; Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel ; Gavrilov, A. ; Cohen, S. ; Mistele, D.
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Resistive switching in thin HfO2 films is studied using a metal-insulator-semiconductor bipolar transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 1 )