Cart (Loading....) | Create Account
Close category search window
 

Near Infrared InAs/GaAsSb Quantum Dot Light Emitting Diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Montes Bajo, M. ; H.H. Wills Phys. Lab., Univ. of Bristol, Bristol, UK ; Ulloa, J.M. ; del Moral, M. ; Guzman, A.
more authors

A series of light-emitting diodes (LEDs) with active layers based on InAs quantum dots (QDs) covered by GaAsSb capping layers is presented. Varying the Sb content in the capping layer from ~2 to ~28%, room temperature electroluminescence (EL) from 1.15 to 1.5 μm is obtained. The external efficiency of the devices, next, increases as the Sb is increased up to ~15% and then decreases for higher Sb contents, consistently with the reported increase of QD height with the Sb content up to ~15% and the band alignment transition from type I to type II above ~15% Sb. An analysis of the EL and photocurrent spectra shows that the emission from type I LEDs originates from the recombination between electrons and holes confined in the QDs. On the other hand, the EL from the type II devices is the combination of two different processes. First, recombination between electrons confined in the QDs and holes at the capping layer. Second, a type I-like recombination of electrons from the QDs and holes residing in extended levels of the quantum well composed by the capping layer and the QDs. The mechanisms responsible for the thermal quenching of the EL are also studied. Escape of holes from the QD to the capping layer is identified as the dominant mechanism for the type I devices, whereas in type II structures it is the escape of electrons from QD excited levels to the barrier which dominates.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 12 )

Date of Publication:

Dec. 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.