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Characteristics of MOS-transistor on basis of silicon-carbon nanotube

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1 Author(s)
Griadun, V.I. ; Zaporozhye Nat. Tech. Univ., Zaporozhye, Ukraine

The MOS transistor model on the basis of silicon-carbon nanotube (SiCNT) has been designed. The nanotube has been used as the semiconductor channel of model of the transistor. It has indices (6.0) and width of a bandgap 0.7 eV. The silicon dioxide (SiO2) layer by thickness of 2.2 nm has been used as the undergate insulator. In calculations of characteristics of the transistor a method of the self-consistent field of electrical potential and the step density of quantum states have been used.

Published in:

Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference

Date of Conference:

12-16 Sept. 2011