Characteristics of MOS-transistor on basis of silicon-carbon nanotube

The MOS transistor model on the basis of silicon-carbon nanotube (SiCNT) has been designed. The nanotube has been used as the semiconductor channel of model of the transistor. It has indices (6.0) and width of a bandgap 0.7 eV. The silicon dioxide (SiO
₂
) layer by thickness of 2.2 nm has been used as the undergate insulator. In calculations of characteristics of the transistor a method of the self-consistent field of electrical potential and the step density of quantum states have been used.