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Influence of the nonlinear bias dependence of the barrier height on measured Schottky-barrier contact parameters

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2 Author(s)
Bozhkov, V.G. ; Sci. Res. Inst. of Semicond. Devices, CJSC, Tomsk, Russia ; Shmargunov, A.V.

A numerical investigation of current-voltage characteristics (IVCs) of the metal-semiconductor Schottky-barrier contact (SBC) considering the influence of image force and tunneling effects is presented. The analysis is carried out on the basis of a model, taking into account the nonlinear bias dependence of the barrier height.

Published in:

Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference

Date of Conference:

12-16 Sept. 2011