Referenced Items are not available for this document.
Heavy ion experimental test results carried out on static random-access memories (SRAMs) manufactured in bulk complementary metal-oxide semiconductor (CMOS) 32 nm are compared to Monte Carlo simulations. Additional simulation capabilities allow for insight in heavy ion cross-section variations as a function of temperature, power supply voltage, and process corners. Monte Carlo simulations of a radiation-hardened-by-design flip-flop based on a dual-interlocked storage cell latch have been performed and show similar sensitivities for 65 nm and 32 nm technologies. Finally, for the first time, the heavy-ion cross-section of the 20 nm bulk CMOS SRAMs is anticipated by simulation by using the latest available technology data.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:58
,
Issue:
6
)
Date of Publication: Dec. 2011
- Page(s):
- 2652 - 2657
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 12408877
- Digital Object Identifier :
- 10.1109/TNS.2011.2170852
- Product Type:
- Journals & Magazines
- Date of Publication :
- 02 November 2011
- Date of Current Version :
- 12 December 2011
- Issue Date :
- Dec. 2011
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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