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Enhanced Radiation-Induced Narrow Channel Effects in Commercial {\hbox {0.18}}~\mu m Bulk Technology

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6 Author(s)

Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P-type metal-oxide semiconductor (PMOS) transistors, leading to a significant threshold voltage shift which may compromise circuit operations. Calculations using a code dedicated to radiation-induced charge trapping in oxides show that the radiation-induced positive charge trapping in trench oxides leads to the modifications of the electrical characteristics experimentally evidenced. Radiation hardening issues are finally discussed as a function of the device geometry and design.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 6 )

Date of Publication:

Dec. 2011

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