Referenced Items are not available for this document.
A low cost 900-MHz RF Low-Noise Amplifier is implemented in a standard 0.9 μm digital CMOS process. The design circumvents the use of both expensive external inductors as well as large on-chip inductors, by employing a gyrator circuit to emulate the inductors. This results in a high gain at RF of 20 dB, a tunable resonance frequency and a chip area of only 0.1 mm2. At a 940 MHz center frequency, this fully balanced LNA exhibits -23 dB of S11, a 5.3 dB noise figure and an IIP3 of -8.6 dBm. It drains 12.5 mA from a 3.3 V supply
Published in:
Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997
Date of Conference: 5-8 May 1997
- Page(s):
- 513 - 516
- Meeting Date :
- 05 May 1997-08 May 1997
- Print ISBN:
- 0-7803-3669-0
- INSPEC Accession Number:
- 5716003
- Conference Location :
- Santa Clara, CA
- Digital Object Identifier :
- 10.1109/CICC.1997.606678
- Product Type:
- Conference Publications
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