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An inductorless 900 MHz RF low-noise amplifier in 0.9 μm CMOS

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2 Author(s)
Shin, Y.J. ; Integrated Circuits & Syst. Lab., California Univ., Los Angeles, CA, USA ; Bult, K.

A low cost 900-MHz RF Low-Noise Amplifier is implemented in a standard 0.9 μm digital CMOS process. The design circumvents the use of both expensive external inductors as well as large on-chip inductors, by employing a gyrator circuit to emulate the inductors. This results in a high gain at RF of 20 dB, a tunable resonance frequency and a chip area of only 0.1 mm2. At a 940 MHz center frequency, this fully balanced LNA exhibits -23 dB of S11, a 5.3 dB noise figure and an IIP3 of -8.6 dBm. It drains 12.5 mA from a 3.3 V supply

Published in:

Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997

Date of Conference:

5-8 May 1997