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A 2.5-V, 1-W monolithic CMOS RF power amplifier

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2 Author(s)
Su, D. ; Hewlett-Packard Co., Palo Alto, CA, USA ; McFarland, W.

A monolithic CMOS RF power amplifier has been designed and fabricated in a standard 0.8-μm CMOS technology and shown to provide l-W of output power at 824-849 MHz to a 50-ohm load from a single 2.5-V supply. The prototype amplifier has a measured drain efficiency of 62%, an overall power-added efficiency of 42%, a power gain of 25 dB, and a total die area of 1.5 mm2

Published in:

Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997

Date of Conference:

5-8 May 1997

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