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Switching characteristics of diamond-based m-i-p+ diodes in power electronic applications

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4 Author(s)
Nawawi, A. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Tseng King Jet ; Rusli ; Amaratunga, G.

Modeling and numerical analysis of diamond m-i-p+ diode have been performed for static and transient analysis using TCAD Sentaurus platform. The simulation results are compared with experimental measurements. Prediction of transient turn-off characteristics of diamond m-i-p+ diode at high temperature is performed for the first time. It was found that unlike conventional Si diode, peak reverse current in diamond m-i-p+ diode reduces with increasing temperature while on-state voltage drop increases.

Published in:

Energy Conversion Congress and Exposition (ECCE), 2011 IEEE

Date of Conference:

17-22 Sept. 2011