Cart (Loading....) | Create Account
Close category search window
 

ESD-Protected K-Band Low-Noise Amplifiers Using RF Junction Varactors in 65-nm CMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ming-Hsien Tsai ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Hsu, S.S.H. ; Fu-Lung Hsueh ; Chewn-Pu Jou

This paper presents two K-band low-noise amplifiers (LNAs) in 65-nm CMOS using the proposed RF junction varactors as the ESD protection devices. The junction varactors are customized for the RF ESD applications with accurate equivalent circuit models. The experimental results demonstrate excellent second breakdown currents (It2) and high ratios of the ESD level to parasitic capacitances (VESD/CESD) . Using the dual-diode topology, the first LNA demonstrates an over 2-kV Human-Body-Model (HBM) ESD protection level with a noise figure (NF) of 2.8 dB and a peak gain of 14.3 dB at around 24 GHz under a power consumption of only 7 mW. By incorporating an RF junction varactor as the extra gate-source capacitance at the input stage as a part of the ESD network, the second LNA presents an enhanced failure current level up to 2.6 A (corresponding to an HBM ESD level of 3.9 kV), and a Charge-Device-Model (CDM) ESD level up to 10.7 A, characterized by the Very Fast Transmission Line Pulse (VFTLP) tests. The second LNA shows a NF of 3.2 dB and a power gain of 13.7 dB, also under 7 mW.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:59 ,  Issue: 12 )

Date of Publication:

Dec. 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.