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In this paper, an extensive description of the main characteristics and possible applications of a double-halo metal-oxide-semiconductor (MOS) device is presented. In particular, the details concerning the prototype fabrication through a standard complementary MOS (CMOS) process and the obtained experimental results are reported. Extensive numerical device simulation has been carried out in order to deeply understand the new structure. Furthermore, to gain insight on the device behavior, an electrical model to be used in SPICE-like circuit simulation tools has been developed and verified. As shown by our analysis, digital integrated circuits employing the new technology introduce, with respect to standard CMOS ones, a drastic reduction of both the device number and the parasitic capacitances, leading to a significant improvement of the circuit performance.