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Linear Scaling of Reset Current Down to 22-nm Node for a Novel \hbox {Cu}_{x}\hbox {Si}_{y}\hbox {O} RRAM

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10 Author(s)
Yang, L.M. ; State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China ; Song, Y.L. ; Liu, Y. ; Wang, Y.L.
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The relationship between low resistance (Ron) and cell size (from 40 nm to 100 μm) is systematically investigated using a 1-Mb CuxSiyO resistive RAM (RRAM) array. To our knowledge, this is the first study to attempt such an endeavor. Spacer pattern technology is employed to obtain a small cell size on the basis of a 0.13-μm standard logic process. Ron exhibits minimal change at 100 μm to 90 nm of RRAM size. However, it quadratically increases at 90 to 40 nm. The reset current, which is highly dependent on Ron, is linearly reduced fivefold in accordance with cell size, thereby improving overall power reduction and cell size scaling. The Ron dependence on cell size can be well explained by the dendritelike conductive filament model.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 1 )

Date of Publication:

Jan. 2012

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